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www.irf.com 1 10/3/11 automotive grade pd - 97732 hexfet ? power mosfet AUIRFZ48N features
! " "# $ % $# " #" &' $( )% !" # *#+, description specifically designed for automotive applications, this stripe planar design of hexfet? power mosfets uti- lizes the latest processing techniques to achieve low on- resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, pro- vides the designer with an extremely efficient and reli- able device for use in automotive and a wide variety of other applications. g d s gate drain source to-220ab AUIRFZ48N s d g d s d g absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is no t implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and po wer dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r ? jc junction-to-case ??? 0.95 r ? cs case-to-sink, flat, greased surface 0.50 ??? c/w r ? ja junction-to-ambient ??? 62 290 265 see fig.12a, 12b, 15, 16 160 1.1 20 max. 69 49 270 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1n m) v (br)dss 55v r ds(on) typ. 11m ? max 14m ?

2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.24mh r g = 50 ? , i as = 40a, v gs =10v. part not recommended for use above this value. pulse width ? 1.0ms; duty cycle ? 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population, starting t j = 25c, l = 0.24mh, r g = 50 ? , i as = 40a, v gs =10v. ?

static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.054 ??? v/c r ds(on) static drain-to-source on-resistance ??? 11 14 m ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v gfs forward transconductance 24 ??? ??? s i dss drain-to-source leakage current ??? ??? 25 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 42 63 q gs gate-to-source charge ??? 9.0 ??? nc q gd gate-to-drain ("miller") charge ??? 17 ??? t d(on) turn-on delay time ??? 12 ??? t r rise time ??? 62 ??? t d(off) turn-off delay time ??? 37 ??? ns t f fall time ??? 37 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 1900 ??? c oss output capacitance ??? 470 ??? c rss reverse transfer capacitance ??? 120 ??? pf c oss output capacitance ??? 2180 ??? c oss output capacitance ??? 340 ??? c oss eff. effective output capacitance ??? 610 ??? source-drain ratings and characteristics parameter min. typ. max. units i s continuous source current ??? ??? 69 (body diode) a i sm pulsed source current ??? ??? 270 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 71 110 ns q rr reverse recovery charge ??? 230 345 nc t on forward turn-on time v ds = v gs , i d = 100 a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 10v v dd = 28v i d = 40a r g = 7.6 ? v gs = -20v conditions conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 10v, i d = 40a p-n junction diode. t j = 25c, i s = 40a, v gs = 0v t j = 25c, i f = 40a, v dd = 28v di/dt = 100a/ s mosfet symbol showing the integral reverse v gs = 0v, v ds = 44v, ? = 1.0mhz v gs = 0v, v ds = 0v to 44v intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = 10v, i d = 40a i d = 40a v ds = 44v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 20v

www.irf.com 3 - *#+ . +# / +0 . 1 "2+2 -- 3 '" 4+ 5 3!*6 7# 7#+ "2 --- ) " 2 qualification information ? to-220 n/a rohs compliant yes esd machine model class m3 (+/- 400v) ??? aec-q101-002 human body model class h1c (+/- 1500v) ??? aec-q101-001 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current fig 5. typical source-drain diode forward voltage fig 6. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v ? 60 s pulse width tj = 25c 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v ? 60 s pulse width tj = 175c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 0 2 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60 s pulse width 0.2 0.6 1.0 1.4 1.8 2.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 67a v gs = 10v 0 20406080 i d ,drain-to-source current (a) 0 10 20 30 40 50 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380 s pulse width

www.irf.com 5 fig 8. typical gate charge vs. gate-to-source voltage fig 7. typical capacitance vs. drain-to-source voltage fig 9. maximum safe operating area fig 10. maximum drain current vs. case temperature fig 11. maximum effective transient thermal impedance, junction-to-case 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 45 50 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v v ds = 28v v ds = 11v i d = 40a 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 70 i d , d r a i n c u r r e n t ( a )

6 www.irf.com fig 12. maximum avalanche energy vs. drain current fig 13. threshold voltage vs. temperature fig 14. typical avalanche current vs.pulsewidth fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 17a, 17b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100 a i d = 1.0ma i d = 1.0a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 40a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.2a 14a bottom 40a

www.irf.com 7 fig 17b. unclamped inductive waveforms fig 17a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 18a. gate charge test circuit fig 18b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16.
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p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ,
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v ds 90% 10% v gs t d(on) t r t d(off) t f ( ) ???? * % ??????? ! " + - fig 19a. switching time test circuit fig 19b. switching time waveforms d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + -

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www.irf.com 9 ordering information base part number package type standard pack complete part number form quantity AUIRFZ48N to-220 tube 50 AUIRFZ48N

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